Integrated MQW intermixed InGaAsP/InP waveguide photodiodes

A multi-wavelength Quantum well (QW) waveguide photodiode (PD) have been designed for Coarse Wavelength Division Multiplexing (CWDM) systems in which spatial tailoring of the bandgap with post growth F implanted QW intermixing of InGaAsP/InP multi QWs for the integration have been considered. Two separate structures with different composition but same well widths are necessary to detect all CWDM wavelengths. For In0.5995Ga0.4005As0.8521P0.1479 well there is a 12 channel coverage from 1,270 to 1,490 nm and for the In0.5540Ga0.4460As0.9489P0.0511 well the 14 channel spans from 1,350 to 1,610 nm. A carrier tunneling time of 20 ps along with the transit time limited bandwidth of 86 GHz gives a 3 dB bandwidth of 41 GHz by optimizing the i-MQW thickness and dopant concentration of the different layers of the waveguide. A maximum efficiency of 22% with insertion loss of 0.4–23 dB has been obtained.