Polarisation insensitive electroabsorption modulator with record power saturation using strained InGaAsP/InGaAsP/InAsP MQW structure

被引：0
|
作者：
Ougazzaden, A [1 ]
Devaux, F [1 ]
机构：
[1] FRANCE TELECOM,CNET,PAB,F-92225 BAGNEUX,FRANCE
来源：
1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS | 1996年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：238 / 239
页数：2
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