Low-bias and high- saturation-power traveling-wave electroabsorption modulator by using InGaAsP/InGaAsP MQW

被引：0
|
作者：
Chiu, YJ [1 ]
Kaman, V [1 ]
Abraham, P [1 ]
Zhang, SZ [1 ]
Bowers, JE [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2 | 2000年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：326 / 327
页数：2
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