High-saturation high-speed traveling-wave InGaAsP-InP electroabsorption modulator

被引：39
|
作者：
Li, GL [1 ]
Pappert, SA
Mages, P
Sun, CK
Chang, WSC
Yu, PKL
机构：
[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
[2] SPAWAR Syst Ctr, San Diego, CA 92152 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 10期
关键词：
broad-band modulation; electroabsorption; high saturation; traveling-wave modulator;
D O I：
10.1109/68.950740
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-saturation power traveling-wave electroabsorption modulators (TW-EAMs) with modulation bandwidth greater than 40 GHz have been demonstrated. Microwave properties of the TW-EAM waveguide are extracted from the measured S-parameters using the equivalent circuit model in [4]. Excellent agreement is obtained between the predicted and the measured frequency responses.
引用
收藏
页码：1076 / 1078
页数：3
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