Influence of electrode width on high-speed performance of traveling-wave electroabsorption modulators

被引：4
|
作者：
Irmscher, S [1 ]
Lewén, R [1 ]
Eriksson, U [1 ]
机构：
[1] Royal Inst Technol, Dept Elect, Lab Photon & Microwave Engn, SE-16440 Kista, Sweden
来源：
2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/ICIPRM.2001.929167
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InP/InGaAs traveling-wave electro-absorption modulators for 1.55 mum were fabricated with on-chip integrated termination resistors. The influence of the electrode width on their microwave properties and modulation bandwidth is measured and analyzed. Reduction of microwave losses and velocity mismatch can be demonstrated for wider electrodes, offering the potential for modulation bandwidth > 100GHz.
引用
收藏
页码：436 / 439
页数：4
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