A NOVEL METHOD OF SELECTIVE EPITAXIAL-GROWTH OF INP BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：9
|
作者：
WAKAHARA, A
PAK, K
YAMADA, H
YOSHIDA, A
NAKAMURA, T
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 04期
关键词：
D O I：
10.1063/1.339682
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1284 / 1286
页数：3
相关论文
共 50 条
  • [21] NEW LATERALLY SELECTIVE GROWTH TECHNIQUE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    BEDAIR, SM
    TISCHLER, MA
    KATSUYAMA, T
    APPLIED PHYSICS LETTERS, 1986, 48 (01) : 30 - 32
  • [22] GROWTH OF ZNS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    FUJITA, S
    TOMOMURA, Y
    SASAKI, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (09): : L583 - L585
  • [23] INGAAS/INP PHOTODIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    DUPUIS, RD
    CAMPBELL, JC
    VELEBIR, JR
    JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 598 - 605
  • [24] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INP USING PHOSPHINE MODULATION
    LEE, MK
    HU, CC
    LIN, MH
    APPLIED PHYSICS LETTERS, 1993, 62 (11) : 1245 - 1247
  • [25] LOW-TEMPERATURE EPITAXIAL-GROWTH OF INP BY REMOTE PLASMA-ASSISTED METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    SUGINO, T
    KAWARAI, K
    MAEDA, M
    SHIRAFUJI, J
    JOURNAL OF CRYSTAL GROWTH, 1994, 139 (1-2) : 15 - 18
  • [26] INITIAL-STAGE OF EPITAXIAL-GROWTH AT THE HIGH-TEMPERATURE OF GAAS AND ALGAAS ON SI BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    SOGA, T
    GEORGE, T
    JIMBO, T
    UMENO, M
    WEBER, ER
    APPLIED PHYSICS LETTERS, 1991, 58 (11) : 1170 - 1172
  • [27] EPITAXIAL-GROWTH OF BATIO3 THIN-FILMS BY PLASMA-ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION
    CHERN, CS
    ZHAO, J
    LUO, L
    LU, P
    LI, YQ
    NORRIS, P
    KEAR, B
    COSANDEY, F
    MAGGIORE, CJ
    GALLOIS, B
    WILKENS, BJ
    APPLIED PHYSICS LETTERS, 1992, 60 (09) : 1144 - 1146
  • [28] EPITAXIAL-GROWTH OF ALPHA-SIC LAYERS BY CHEMICAL VAPOR-DEPOSITION TECHNIQUE
    MATSUNAMI, H
    NISHINO, S
    ODAKA, M
    TANAKA, T
    JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 72 - 75
  • [29] EPITAXIAL-GROWTH OF ZNS ON SI BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
    HIRABAYASHI, K
    KOGURE, O
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1985, 24 (12): : 1590 - 1593
  • [30] SILICON EPITAXIAL-GROWTH BY RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITION
    LEE, SK
    KU, YH
    KWONG, DL
    APPLIED PHYSICS LETTERS, 1989, 54 (18) : 1775 - 1777
12345