ELECTROLUMINESCENCE AT P-N JUNCTIONS IN GALLIUM PHOSPHIDE

被引：87
|
作者：
GERSHENZON, M
MIKULYAK, RM
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1961年 / 32卷 / 07期
关键词：
D O I：
10.1063/1.1736232
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1338 / &
相关论文
共 50 条
  • [21] RADIATIVE RECOMBINATION IN P-N JUNCTIONS IN INDIUM PHOSPHIDE
    ORMONT, AB
    ELISEEV, PG
    ISMAILOV, I
    YUNOVICH, AE
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (05): : 534 - +
  • [22] INVESTIGATION OF ELECTROLUMINESCENCE OF P-N JUNCTIONS IN INDIUM ARSENIDE
    ESINA, NP
    ZOTOVA, NV
    NASLEDOV, DN
    [J]. SOVIET PHYSICS SOLID STATE,USSR, 1967, 9 (05): : 1036 - +
  • [23] ELECTROLUMINESCENCE OF P-N JUNCTIONS IN IN1-XGAXP
    BAROEV, TR
    ELISEEV, PG
    SIUKAEV, NV
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (03): : 477 - &
  • [24] IMPURITY BANDS AND ELECTROLUMINESCENCE IN SIC P-N JUNCTIONS
    PATRICK, L
    CHOYKE, WJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (02) : 236 - 248
  • [25] ON ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF DIFFUSED P-N JUNCTIONS IN SIC
    VIOLIN, EE
    KHOLUYAN.GF
    [J]. SOVIET PHYSICS SOLID STATE,USSR, 1964, 6 (06): : 1331 - +
  • [26] ON THE ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF DIFFUSED P-N JUNCTIONS IN SIC
    VIOLIN, EE
    KHOLUYANOV, GF
    [J]. SOVIET PHYSICS-SOLID STATE, 1964, 6 (06): : 1331 - 1335
  • [27] ELECTRO-OPTIC AND WAVEGUIDE PROPERTIES OF REVERSE-BIASED GALLIUM PHOSPHIDE P-N JUNCTIONS
    REINHART, FK
    NELSON, DF
    MCKENNA, J
    [J]. PHYSICAL REVIEW, 1969, 177 (03): : 1208 - +
  • [28] Electroluminescence characterization of cubic gallium nitride p-n junctions grown on SiC/Si substrates by MBE
    Gamez-Cuatzin, H.
    Tardy, J.
    Rojo-Romeo, P.
    Philippe, A.
    Bru-Chevallier, C.
    Souifi, A.
    Guillot, G.
    Martinez-Guerrero, E.
    Feuillet, G.
    Daudin, B.
    Aboughé-Nzé, P.
    Monteil, Y.
    [J]. Physica Status Solidi (A) Applied Research, 1999, 176 (01): : 131 - 135
  • [29] Electroluminescence characterization of cubic gallium nitride p-n junctions grown on SiC/Si substrates by MBE
    Gamez-Cuatzin, H
    Tardy, J
    Rojo-Romeo, P
    Philippe, A
    Bru-Chevallier, C
    Souifi, A
    Guillot, G
    Martinez-Guerrero, E
    Feuillet, G
    Daudin, B
    Aboughé-Nzé, P
    Monteil, Y
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1999, 176 (01): : 131 - 135
  • [30] ELECTRICAL PROPERTIES OF GALLIUM PHOSPHIDE-GALLIUM ARSENIDE P-N HETEROJUNCTIONS
    ALFEROV, ZI
    KOROLKOV, VI
    TRUKAN, MK
    [J]. SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (12): : 2813 - +
12345