共 50 条
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- [2] SOME ELECTROLUMINESCENCE PROPERTIES OF DIFFUSED P-N JUNCTIONS IN INDIUM ARSENIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (06): : 795 - &
- [3] CHARACTERISTICS OF LONG-WAVELENGTH ELECTROLUMINESCENCE SPECTRUM OF P-N JUNCTIONS IN INDIUM ARSENIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (11): : 1412 - +
- [4] MECHANISM OF RADIATION RECOMBINATION IN P-N JUNCTIONS IN INDIUM ARSENIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (03): : 305 - +
- [5] ELECTRICAL AND ELECTROLUMINESCENCE PROPERTIES OF INDIUM PHOSPHIDE P-N JUNCTIONS [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (08): : 988 - &
- [6] INVESTIGATION OF CAPACITANCE OF P-N JUNCTIONS IN INDIUM PHOSPHIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (07): : 873 - +
- [7] INVESTIGATION OF INJECTION ELECTROLUMINESCENCE OF P-N JUNCTIONS IN GALLIUM PHOSPHIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (04): : 450 - +
- [9] COHERENT RADIATION FROM P-N JUNCTIONS IN INDIUM ARSENIDE-PHOSPHIDE [J]. SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (04): : 1025 - +