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- [3] CHARACTERISTICS OF LONG-WAVELENGTH ELECTROLUMINESCENCE SPECTRUM OF P-N JUNCTIONS IN INDIUM ARSENIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (11): : 1412 - +
- [4] MECHANISM OF RADIATION RECOMBINATION IN P-N JUNCTIONS IN INDIUM ARSENIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (03): : 305 - +
- [5] ELECTRICAL AND ELECTROLUMINESCENCE PROPERTIES OF INDIUM PHOSPHIDE P-N JUNCTIONS [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (08): : 988 - &
- [7] COHERENT RADIATION FROM P-N JUNCTIONS IN INDIUM ARSENIDE-PHOSPHIDE [J]. SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (04): : 1025 - +