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- [4] ELECTRICAL PROPERTIES OF DIFFUSED P-N JUNCTIONS IN INDIUM PHOSPHIDE[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (04): : 428 - &GALAVANO.VVMETREVEL.SGNASLEDOV, DNSIUKAEV, NV
- [5] RADIATIVE RECOMBINATION IN GAP P-N AND TUNNEL JUNCTIONS[J]. APPLIED PHYSICS LETTERS, 1965, 6 (06) : 113 - +LOGAN, RAGERSHENZON, MTRUMBORE, FAWHITE, HG
- [6] MECHANISM OF RADIATION RECOMBINATION IN P-N JUNCTIONS IN INDIUM ARSENIDE[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (03): : 305 - +ESINA, NPZOTOVA, NVNASLEDOV, DN
- [7] TUNNEL-EFFECT RADIATIVE RECOMBINATION IN P-N JUNCTIONS[J]. SOVIET PHYSICS JETP-USSR, 1967, 24 (05): : 869 - +YUNOVICH, AEORMONT, AB
- [8] RADIATIVE RECOMBINATION AND CURRENT - VOLTAGE CHARACTERISTICS OF P - N JUNCTIONS IN INDIUM PHOSPHIDE IN TRANSVERSE MAGNETIC FIELDS.[J]. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (04): : 494 - 495Sirota, N.N.Mikhnevich, V.V.
- [9] COHERENT RADIATION FROM P-N JUNCTIONS IN INDIUM ARSENIDE-PHOSPHIDE[J]. SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (04): : 1025 - +ELISEEV, PGISMAILOV, INASHELSK.AYOSTROVSK.VZ
- [10] RADIATIVE RECOMBINATION IN GAAS P-N JUNCTIONS FORMED BY BERYLLIUM DIFFUSION[J]. SOVIET PHYSICS-SOLID STATE, 1964, 6 (06): : 1496 - 1497YUNOVICH, AEELISEEV, PGNAKHODNOVA, IAORMONT, ABOSADCHAYA, LASTUCHEBNIKOV, VM