RADIATIVE RECOMBINATION AND CURRENT - VOLTAGE CHARACTERISTICS OF P - N JUNCTIONS IN INDIUM PHOSPHIDE IN TRANSVERSE MAGNETIC FIELDS.

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作者：

Sirota, N.N.

Mikhnevich, V.V.

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Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1974年 / 8卷 / 04期

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摘要：

Results of investigating the influence of a transverse magnetic field applied at right angles to the current flowing across a p-n junction on the luminescence spectrum, luminescence intensity and I-V characteristics of p-n junctions in indium phosphide at 77 K are reported.

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页码：494 / 495

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[1] RADIATIVE RECOMBINATION AND CURRENT-VOLTAGE CHARACTERISTICS OF P-N-JUNCTIONS IN INDIUM-PHOSPHIDE IN TRANSVERSE MAGNETIC-FIELDS
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[2] RADIATIVE RECOMBINATION IN P-N JUNCTIONS IN INDIUM PHOSPHIDE
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[3] BEHAVIOR OF CURRENT-VOLTAGE CHARACTERISTICS OF INDIUM PHOSPHIDE N-P JUNCTION
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[8] CHARACTERISTICS OF RADIATIVE RECOMBINATION IN INDIUM ANTIMONIDE SUBJECTED TO A MAGNETIC FIELD
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[9] ELECTRICAL AND ELECTROLUMINESCENCE PROPERTIES OF INDIUM PHOSPHIDE P-N JUNCTIONS
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[10] ELECTRICAL PROPERTIES OF DIFFUSED P-N JUNCTIONS IN INDIUM PHOSPHIDE
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