RADIATIVE RECOMBINATION AND CURRENT - VOLTAGE CHARACTERISTICS OF P - N JUNCTIONS IN INDIUM PHOSPHIDE IN TRANSVERSE MAGNETIC FIELDS.

被引：0
|
作者：
Sirota, N.N.
Mikhnevich, V.V.
机构：
来源：
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1974年 / 8卷 / 04期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Results of investigating the influence of a transverse magnetic field applied at right angles to the current flowing across a p-n junction on the luminescence spectrum, luminescence intensity and I-V characteristics of p-n junctions in indium phosphide at 77 K are reported.
引用
下载
收藏
页码：494 / 495
相关论文
共 50 条
  • [41] RADIATIVE RECOMBINATION IN GASB P-N JUNCTIONS PRODUCED BY PULLING FROM MELT
    VAVILOV, VS
    NAKHODNO.IA
    SILIN, AR
    YUNOVICH, AE
    SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (08): : 1859 - +
  • [42] CURRENT INSTABILITIES IN n-TYPE GaAs SUBJECTED TO STRONG MAGNETIC FIELDS.
    Matveev, G.A.
    Tsidil'kovskii, I.M.
    Soviet physics. Semiconductors, 1983, 17 (05): : 532 - 534
  • [43] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
    SAH, CT
    NOYCE, RN
    SHOCKLEY, W
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243
  • [44] Current-voltage characteristics of n/n lateral polarity junctions in GaN
    Aleksov, Aleksandar
    Collazo, Ramon
    Mita, Seiji
    Schlesser, Raoul
    Sitar, Zlatko
    APPLIED PHYSICS LETTERS, 2006, 89 (05)
  • [45] Hysteresis loops in the current-voltage characteristics of magnetic tunnel junctions
    Baranov, AM
    Gulyaev, YV
    Zil'berman, PE
    Krikunov, AI
    Ogrin, YF
    Chmil, AI
    Stepina, ND
    Feigin, LA
    Kudryavtsev, VV
    Sklizkova, VP
    Heide, C
    Elliott, R
    JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2001, 46 (01) : 93 - 98
  • [46] Tuning the Current-Voltage Characteristics of Josephson Junctions by Strong Microwave Fields
    Chesca, B.
    Savel'ev, S.
    Rakhmanov, A. L.
    Smilde, H. J. H.
    Hilgenkamp, H.
    25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 5: SUPERCONDUCTIVITY, 2009, 150
  • [47] MAGNETIC-FIELD EFFECT ON RADIATION OF INDIUM PHOSPHIDE P-N-TRANSITIONS
    SIROTA, NN
    MIKHNEVI.VV
    DOKLADY AKADEMII NAUK BELARUSI, 1972, 16 (03): : 205 - +
  • [48] INFLUENCE OF MAGNETIC-FIELDS ON MICROPLASMA INSTABILITY OF CURRENT IN DIFFUSED SILICON P-N-JUNCTIONS
    ISAEV, MR
    MUTALIBOV, SR
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (09): : 1167 - 1167
  • [49] INVESTIGATION OF INTERACTION OF IMPURITIES IN SILICON BY MEANS OF CURRENT-VOLTAGE CHARACTERISTICS OF P-N JUNCTIONS
    SAIDOV, MS
    SULTANOV, I
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (02): : 207 - &
  • [50] PHOTOMAGNETIC EFFECT IN CADMIUM TELLURIDE P-N-JUNCTIONS .2. CURRENT VOLTAGE CHARACTERISTICS
    KIREEV, PS
    FEDOROVSKII, AN
    KALUGINA, LI
    PAVLOVA, GS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (11): : 1785 - 1787
12345