TRADEOFF BETWEEN THRESHOLD VOLTAGE AND BREAKDOWN IN HIGH-VOLTAGE DOUBLE-DIFFUSED MOS-TRANSISTORS

被引：10

作者：

POCHA, MD ^{[1
]}

PLUMMER, JD ^{[1
]}

MEINDL, JD ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 11期

关键词：

D O I：

10.1109/T-ED.1978.19273

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1325 / 1327

页数：3

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