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TRADEOFF BETWEEN THRESHOLD VOLTAGE AND BREAKDOWN IN HIGH-VOLTAGE DOUBLE-DIFFUSED MOS-TRANSISTORS
被引:10
|
作者
:
POCHA, MD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
POCHA, MD
[
1
]
PLUMMER, JD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
PLUMMER, JD
[
1
]
MEINDL, JD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
MEINDL, JD
[
1
]
机构
:
[1]
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1978年
/ 25卷
/ 11期
关键词
:
D O I
:
10.1109/T-ED.1978.19273
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1325 / 1327
页数:3
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