TRADEOFF BETWEEN THRESHOLD VOLTAGE AND BREAKDOWN IN HIGH-VOLTAGE DOUBLE-DIFFUSED MOS-TRANSISTORS

被引：10
|
作者：
POCHA, MD [1 ]
PLUMMER, JD [1 ]
MEINDL, JD [1 ]
机构：
[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 11期
关键词：
D O I：
10.1109/T-ED.1978.19273
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1325 / 1327
页数：3
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