SIMPLE THEORY FOR THRESHOLD VOLTAGE MODULATION IN SHORT-CHANNEL MOS-TRANSISTORS

被引：16
|
作者：
VARSHNEY, RC [1 ]
机构：
[1] BURROUGHS CORP,MICRO COMPONENTS ORG,16701 W BERNARDO DR,SAN DIEGO,CA 92127
来源：
ELECTRONICS LETTERS | 1973年 / 9卷 / 25期
关键词：
D O I：
10.1049/el:19730444
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：600 / 602
页数：3
相关论文
共 50 条
  • [1] THRESHOLD VOLTAGE MISMATCH IN SHORT-CHANNEL MOS-TRANSISTORS
    STEYAERT, M
    BASTOS, J
    ROOVERS, R
    KINGET, P
    SANSEN, W
    GRAINDOURZE, B
    PERGOOT, A
    JANSSENS, E
    [J]. ELECTRONICS LETTERS, 1994, 30 (18) : 1546 - 1548
  • [2] PHYSICAL MODEL OF THRESHOLD VOLTAGE IN SILICON MOS-TRANSISTORS INCLUDING REVERSE SHORT-CHANNEL EFFECT
    BRUT, H
    JUGE, A
    GHIBAUDO, G
    [J]. ELECTRONICS LETTERS, 1995, 31 (05) : 411 - 412
  • [3] THRESHOLD VOLTAGES OF SHORT-CHANNEL DUAL-GATE MOS-TRANSISTORS
    BARSAN, RM
    [J]. REVUE ROUMAINE DE PHYSIQUE, 1982, 27 (02): : 191 - 209
  • [4] REDUCTION OF KINK EFFECT IN SHORT-CHANNEL MOS-TRANSISTORS
    HAFEZ, IM
    GHIBAUDO, G
    BALESTRA, F
    [J]. IEEE ELECTRON DEVICE LETTERS, 1990, 11 (03) : 120 - 122
  • [5] BSIM - BERKELEY SHORT-CHANNEL IGFET MODEL FOR MOS-TRANSISTORS
    SHEU, BJ
    SCHARFETTER, DL
    KO, PK
    JENG, MC
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1987, 22 (04) : 558 - 566
  • [6] SHORT-CHANNEL MOS-TRANSISTORS IN THE AVALANCHE-MULTIPLICATION REGIME
    MULLER, W
    RISCH, L
    SCHUTZ, A
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (11) : 1778 - 1784
  • [7] THRESHOLD VOLTAGE IN SHORT-CHANNEL MOS DEVICES
    VISWANATHAN, CR
    BURKEY, BC
    LUBBERTS, G
    TREDWELL, TJ
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (05) : 932 - 940
  • [8] SHORT-CHANNEL A-SI THIN-FILM MOS-TRANSISTORS
    UCHIDA, Y
    MATSUMURA, M
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (12) : 2940 - 2943
  • [9] DEGRADATION OF SHORT-CHANNEL MOS-TRANSISTORS STRESSED AT LOW-TEMPERATURE
    NGUYENDUC, C
    CRISTOLOVEANU, S
    REIMBOLD, G
    GAUTIER, J
    [J]. JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 661 - 664
  • [10] IMPACT OF ANOMALOUS SHORT-CHANNEL MOS-TRANSISTORS ON VLSI CIRCUIT RELIABILITY
    SCHNABLE, GL
    SCHLESIER, KM
    SWARTZ, GA
    WU, CP
    [J]. MICROELECTRONICS RELIABILITY, 1993, 33 (04) : 565 - 582
12345