BSIM - BERKELEY SHORT-CHANNEL IGFET MODEL FOR MOS-TRANSISTORS

被引：318
|
作者：
SHEU, BJ [1 ]
SCHARFETTER, DL [1 ]
KO, PK [1 ]
JENG, MC [1 ]
机构：
[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1987年 / 22卷 / 04期
关键词：
D O I：
10.1109/JSSC.1987.1052773
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：558 / 566
页数：9
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