INFLUENCE OF THE SURFACE CONDUCTION ON THE ELECTRICAL-PROPERTIES OF COMPENSATED N-TYPE INSB

被引：0
|
作者：
PETROVSKII, VI
SOLOVEV, NN
OMELYANOVSKII, EM
IVLEVA, VS
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1978年 / 12卷 / 10期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1132 / 1135
页数：4
相关论文
共 50 条
  • [31] OPTICAL AND ELECTRICAL-PROPERTIES OF IODINE DOPED N-TYPE ZNSE CRYSTALS
    BALCERZYK, M
    FIRSZT, F
    MECZYNSKA, H
    ACTA PHYSICA POLONICA A, 1991, 79 (2-3) : 299 - 302
  • [32] SURFACE PLASMONS AND REFLECTIVITY OF N-TYPE INSB
    ANDERSON, WE
    ALEXANDER, RW
    BELL, RJ
    PHYSICAL REVIEW LETTERS, 1971, 27 (16) : 1057 - +
  • [33] ELECTRICAL-PROPERTIES OF N-TYPE EPITAXIAL INDIUM-PHOSPHIDE FILMS
    TSAI, MJ
    BUBE, RH
    JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3397 - 3401
  • [34] ELECTRICAL CONDUCTIVITY AND HALL-EFFECT AT LOW-TEMPERATURES IN STRONGLY COMPENSATED N-TYPE INSB
    YAREMENKO, NG
    POTAPOV, VT
    IVLEVA, VS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1084 - 1091
  • [35] IMPURITY CONDUCTION AND THE MINIMUM METALLIC CONDUCTIVITY IN N-TYPE INSB
    BISKUPSKI, G
    DUBOIS, H
    FERRE, D
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (01): : 177 - 181
  • [36] PHOTOCONDUCTIVITY OF STRONGLY COMPENSATED N-TYPE INSB AT MILLIMETER AND SUBMILLIMETER WAVELENGTHS
    AFINOGENOV, VM
    TRIFONOV, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1099 - 1105
  • [37] LOW-TEMPERATURE CONDUCTIVITY OF STRONGLY COMPENSATED N-TYPE INSB
    YAREMENKO, NG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (05): : 554 - 558
  • [38] ABSORPTION OF ULTRASOUND IN COMPENSATED n-TYPE InSb AT LOW TEMPERATURES.
    Vekshina, V.S.
    Drichko, I.L.
    Pepik, N.I.
    Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela), 1984, 26 (07): : 1241 - 1244
  • [39] INVESTIGATION OF RECOMBINATION PROPERTIES OF N-TYPE INSB
    BLAUTBLACHEV, AN
    IGLITSYN, MI
    IVLEVA, VS
    SELYANINA, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (02): : 247 - 248
  • [40] OPTICAL AND ELECTRICAL-PROPERTIES OF ELECTROCHEMICALLY DOPED N-TYPE AND P-TYPE POLYTHIOPHENES
    KANETO, K
    URA, S
    YOSHINO, K
    INUISHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (03): : L189 - L191
12345