共 50 条
- [11] ELECTRICAL-PROPERTIES OF N-TYPE EPITAXIAL GAP LAYERS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 36 (02): : 659 - 668
- [14] ELECTRICAL AND GALVANOMAGNETIC PROPERTIES OF N-TYPE INSB AT LOW TEMPERATURES SOVIET PHYSICS-SOLID STATE, 1961, 3 (04): : 861 - 864
- [15] SUBMILLIMETER PHOTOCONDUCTIVITY OF WEAKLY COMPENSATED N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (06): : 654 - 657
- [16] INVESTIGATION OF THE ACOUSTOELECTRONIC INTERACTION IN P-TYPE INSB AND COMPENSATED N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (07): : 788 - 790
- [18] MAGNETORESISTANCE OF N-TYPE INSB IN PRESENCE OF IMPURITY CONDUCTION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (10): : 1612 - 1615
- [19] ELECTRON MOBILITY IN STRONGLY COMPENSATED N-TYPE InSb. Soviet physics. Semiconductors, 1983, 17 (11): : 1258 - 1261
- [20] ELECTRON-MOBILITY IN STRONGLY COMPENSATED N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (11): : 1258 - 1261