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- [21] NOISE TEMPERATURE IN COMPENSATED N-TYPE INSB-CR SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (12): : 1373 - 1374
- [22] NEGATIVE MAGNETORESISTANCE IN HEAVILY DOPED AND COMPENSATED N-TYPE INSB PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 119 (02): : 721 - 726
- [23] CYCLOTRON-RESONANCE IN STRONGLY COMPENSATED N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (01): : 152 - 153
- [24] FARADAY-EFFECT IN STRONGLY COMPENSATED N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1076 - 1080
- [25] INVESTIGATION OF THE ACOUSTOELECTRONIC INTERACTION IN p-TYPE InSb AND COMPENSATED n-TYPE InSb. Soviet physics. Semiconductors, 1982, 16 (07): : 788 - 790
- [26] INFLUENCE OF GAMMA-IRRADIATION ON ELECTRICAL-PROPERTIES OF N-TYPE SI WITH AN INHOMOGENEOUS IMPURITY DISTRIBUTION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (10): : 1166 - 1167
- [28] INFLUENCE OF CONDUCTION-BAND NONPARABOLICITY ON HEATING OF ELECTRONS IN SEMICONDUCTORS SUCH AS N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (11): : 1804 - &