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- [3] HIGH-FIELD CYCLOTRON-RESONANCE IN N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (03): : 306 - 308
- [4] PHOTOCONDUCTIVITY IN COMPENSATED N-INSB BY CYCLOTRON-RESONANCE FIZIKA TVERDOGO TELA, 1975, 17 (01): : 289 - 297
- [5] MAGNETORESISTANCE OF STRONGLY COMPENSATED N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (06): : 830 - 831
- [6] CYCLOTRON-RESONANCE IN N-TYPE INAS BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 382 - 382
- [7] OBSERVATION OF AN ADDITIONAL CYCLOTRON-RESONANCE PEAK DUE TO IMPURITY ELECTRONS IN N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (04): : 445 - 446
- [8] CYCLOTRON-RESONANCE IN N-TYPE INP AND GAAS PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 60 (02): : K127 - K129
- [9] ELECTRON MOBILITY IN STRONGLY COMPENSATED N-TYPE InSb. Soviet physics. Semiconductors, 1983, 17 (11): : 1258 - 1261
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