共 50 条
- [1] ULTRASOUND ABSORPTION IN COMPENSATED N-INSB AT LOW-TEMPERATURES FIZIKA TVERDOGO TELA, 1984, 26 (07): : 2048 - 2052
- [3] ABSORPTION OF MICROWAVE POWER IN N-TYPE INSB AT LOW-TEMPERATURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (01): : 89 - 93
- [4] DETERMINATION OF THE DENSITY OF FREE-ELECTRONS IN COMPENSATED N-TYPE INSB FROM THE ABSORPTION OF ULTRASOUND SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (01): : 74 - 77
- [5] ULTRASOUND ABSORPTION IN LIGHTLY DOPED, COMPENSATED N-INSB AT ULTRALOW TEMPERATURES FIZIKA TVERDOGO TELA, 1990, 32 (09): : 2579 - 2585
- [6] ELECTRICAL CONDUCTIVITY AND HALL-EFFECT AT LOW-TEMPERATURES IN STRONGLY COMPENSATED N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1084 - 1091
- [7] MAGNETORESISTANCE OF STRONGLY COMPENSATED N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (06): : 830 - 831
- [8] INTRABAND PHOTOCONDUCTIVITY OF COMPENSATED N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (08): : 972 - 976
- [9] LOW-TEMPERATURE CONDUCTIVITY OF STRONGLY COMPENSATED N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (05): : 554 - 558