ABSORPTION OF ULTRASOUND IN COMPENSATED n-TYPE InSb AT LOW TEMPERATURES.

被引：0

作者：

Vekshina, V.S. ^{[1
]}

Drichko, I.L. ^{[1
]}

Pepik, N.I. ^{[1
]}

机构：

[1] Acad of Sciences of the USSR, A. F., Ioffe Physicotechnical Inst,, Leningrad, USSR, Acad of Sciences of the USSR, A. F. Ioffe Physicotechnical Inst, Leningrad, USSR

来源：

Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela) | 1984年 / 26卷 / 07期

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引用

页码：1241 / 1244

共 50 条

[41] PHONON CYCLOTRON RESONANCE IN INFRARED ABSORPTION IN N-TYPE INSB
ENCK, RC
SALEH, AS
FAN, HY
PHYSICAL REVIEW, 1969, 182 (03): : 790 - &
[42] INFLUENCE OF THE SURFACE CONDUCTION ON THE ELECTRICAL PROPERTIES OF COMPENSATED N-TYPE InSb.
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Solov'ev, N.N.
Omel'yanovskii, E.M.
Ivleva, V.S.
1978, 12 (10): : 1132 - 1135
[43] MAGNETOACOUSTIC EFFECTS IN N-TYPE INSB - MAGNETIC FREEZEOUT AND HOPPING CONDUCTIVITY AT LOW-TEMPERATURES
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FERNANDEZ, B
CHEEKE, JDN
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[44] EFFECT OF IMPURITY-INDUCED BREAKDOWN ON ULTRASOUND ABSORPTION IN COMPENSATED N-INSB
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[45] INFLUENCE OF THE ELECTRIC FIELD ON THE ELECTRICAL CONDUCTIVITY, HALL COEFFICIENT, AND MAGNETORESISTANCE OF N-TYPE INSB AT LOW TEMPERATURES
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NASLEDOV, DN
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[46] ANISOTROPY OF ABSORPTION AND OR RECOMBINATION RADIATION OF HOT CARRIERS IN N-TYPE INSB
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STAFEEV, VI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (09): : 1144 - &
[47] MAGNETORESISTANCE IN N-TYPE GERMANIUM AT LOW TEMPERATURES
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PHYSICAL REVIEW, 1958, 112 (02): : 317 - 321
[48] PIEZORESISTANCE IN N-TYPE GERMANIUM AT LOW TEMPERATURES
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KOBAYASHI, A
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[49] CONDUCTIVITY OF COMPENSATED MODERATELY DOPED p-TYPE Ge AT LOW AND ULTRALOW TEMPERATURES.
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[50] QUANTUM THERMOMAGNETIC EFFECTS IN N-TYPE INSB AND N-TYPE INAS
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SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (07): : 833 - +

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