共 50 条
- [1] INVESTIGATION OF INTERACTION OF MILLIMETER AND SUBMILLIMETER RADIATION WITH HOT CARRIERS IN N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (11): : 1353 - 1356
- [2] RECOMBINATION OF HOT CARRIERS ON A REAL SURFACE OF N-TYPE GERMANIUM SOVIET PHYSICS SOLID STATE,USSR, 1967, 9 (03): : 729 - +
- [3] INVESTIGATION OF RECOMBINATION PROPERTIES OF N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (02): : 247 - 248
- [4] CONDUCTIVITY ANISOTROPY OF N-TYPE SILICON IN RANGE OF WARM AND HOT CARRIERS ZEITSCHRIFT FUR PHYSIK, 1965, 187 (04): : 359 - &
- [5] MODEL OF RECOMBINATION PROCESSES IN N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (01): : 10 - 13
- [6] CHARACTERISTICS OF RECOMBINATION PROCESSES IN N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (11): : 1414 - 1416
- [7] RECOMBINATION OF CARRIERS IN HIGH-RESISTIVITY N-TYPE INSB AT 77DEGREESK SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (11): : 1246 - 1248
- [8] PROBLEM OF THE ANISOTROPY OF THE MAGNETORESISTANCE OF N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (05): : 610 - 611
- [9] ABSORPTION OF MILLIMETER AND SUBMILLIMETER RADIATION IN N-TYPE INSB AT HELIUM TEMPERATURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (11): : 1439 - +
- [10] ABSORPTION OF INFRARED RADIATION BY FREE CARRIERS IN N-TYPE GAAS SOVIET PHYSICS SOLID STATE,USSR, 1967, 9 (04): : 769 - +