共 50 条
- [31] RESISTANCE ANOMALY AND NEGATIVE MAGNETORESISTANCE IN N-TYPE INSB AT VERY LOW TEMPERATURES PHYSICAL REVIEW, 1967, 153 (03): : 873 - +
- [32] SCATTERING OF HOT-ELECTRONS IN N-TYPE INSB AT LOW-TEMPERATURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (10): : 1626 - 1630
- [33] INVESTIGATION OF THE SURFACE PROPERTIES OF EPITAXIAL n-TYPE GaAs FILMS AT LOW TEMPERATURES. 1973, 7 (02): : 258 - 261
- [34] HEATING PHOTOMAGNETIC EFFECT IN COMPENSATED N-TYPE INAS AT LOW-TEMPERATURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (07): : 914 - 915
- [35] NEGATIVE PHOTOCONDUCTIVITY OF STRONGLY COMPENSATED N-TYPE GAAS AT LOW-TEMPERATURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (04): : 474 - 476
- [36] PHOTOCONDUCTIVITY OF N-TYPE INSB DUE TO CYCLOTRON ABSORPTION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (09): : 1159 - &
- [37] PHOTOCONDUCTIVITY OF STRONGLY COMPENSATED N-TYPE INSB AT MILLIMETER AND SUBMILLIMETER WAVELENGTHS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1099 - 1105
- [38] ELECTRICAL-CONDUCTIVITY OF HEAVILY DOPED AND COMPENSATED N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (07): : 874 - 877
- [39] ABSORPTION-EDGE OF COMPENSATED N-TYPE INAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (03): : 484 - &
- [40] INFLUENCE OF THE SURFACE CONDUCTION ON THE ELECTRICAL-PROPERTIES OF COMPENSATED N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (10): : 1132 - 1135