INTEL TO INTRODUCE N-CHANNEL RAM WITH POWER DISSIPATION OF C-MOS

被引：0
|
作者：
不详
机构：
来源：
ELECTRONICS | 1979年 / 52卷 / 05期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：40 / 41
页数：2
相关论文
共 50 条
  • [31] HOT-ELECTRON INJECTION INTO THE OXIDE IN N-CHANNEL MOS DEVICES
    EITAN, B
    FROHMANBENTCHKOWSKY, D
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (03) : 328 - 340
  • [32] MEASUREMENT AND MODELING OF CHARGE FEEDTHROUGH IN N-CHANNEL MOS ANALOG SWITCHES
    WILSON, WB
    MASSOUD, HZ
    SWANSON, EJ
    GEORGE, RT
    FAIR, RB
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (06) : 1206 - 1213
  • [33] REALIZATION OF QUATERNARY LOGIC-CIRCUITS BY N-CHANNEL MOS DEVICES
    YASUDA, Y
    TOKUDA, Y
    ZAIMA, S
    PAK, K
    NAKAMURA, T
    YOSHIDA, A
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1986, 21 (01) : 162 - 168
  • [34] N-CHANNEL MOS MEMORIES - NEW POSSIBILITIES FOR MICROPROCESSOR MEMORY DESIGN
    UEBE, F
    MICROELECTRONICS AND RELIABILITY, 1974, 13 (05): : 387 - 400
  • [35] N-channel power MOSFET for fast neutron detection
    Salame, C
    Mialhe, P
    Charles, JP
    Khoury, A
    MICROELECTRONICS INTERNATIONAL, 2002, 19 (01) : 19 - 22
  • [36] DEVELOPMENT OF A RADIATION HARD N-CHANNEL POWER MOSFET
    ROPER, GB
    LOWIS, R
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4110 - 4115
  • [37] The isochronal annealing of irradiated n-channel power VDMOSFETs
    Ristic, Goran S.
    Andjelkovic, Marko
    Savovic, Svetislav
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2016, 366 : 171 - 178
  • [38] SINGLE-SUPPLY ERASABLE PROM SAVES POWER WITH C-MOS PROCESS
    RAMACHANDRAN, G
    ELECTRONICS, 1978, 51 (14): : 106 - 111
  • [39] PREPARATION AND STABILITY OF ENHANCEMENT N-CHANNEL MOS TRANSISTORS WITH HIGH ELECTRON MOBILITY
    EVERSTEYN, FC
    PEEK, HL
    PHILIPS RESEARCH REPORTS, 1969, 24 (01): : 15 - +
  • [40] C-V Characteristics of n-channel Double Gate MOS Structures Incorporating the Effect of Interface States
    Alam, A.
    Ahmed, S.
    Alam, M. K.
    Khosru, Quazi D. M.
    PROCEEDINGS OF ICECE 2008, VOLS 1 AND 2, 2008, : 456 - 459
12345