DEVELOPMENT OF A RADIATION HARD N-CHANNEL POWER MOSFET

被引：15
|
作者：
ROPER, GB [1 ]
LOWIS, R [1 ]
机构：
[1] MULLARD LTD,SOUTHAMPTON,ENGLAND
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 06期
关键词：
D O I：
10.1109/TNS.1983.4333091
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：4110 / 4115
页数：6
相关论文
共 50 条
  • [1] N-channel power MOSFET for fast neutron detection
    Salame, C
    Mialhe, P
    Charles, JP
    Khoury, A
    MICROELECTRONICS INTERNATIONAL, 2002, 19 (01) : 19 - 22
  • [2] The Effects of gamma-ray Radiation on n-channel MOSFET
    Iqbal, M. A.
    NANOTECHNOLOGY 2011: ADVANCED MATERIALS, CNTS, PARTICLES, FILMS AND COMPOSITES, NSTI-NANOTECH 2011, VOL 1, 2011, : 104 - 107
  • [3] Ionizing Radiation Dose Sensor Based on n-channel MOSFET
    Podlepetsky, B. I.
    Pershenkov, V. S.
    Belyakov, V. V.
    Bakerenkov, A. S.
    Felitsyn, V.
    Rodin, A. S.
    4TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGIES AND BIOMEDICAL ENGINEERING, ICNBME-2019, 2020, 77 : 399 - 404
  • [4] A Study of the Performance of an N-Channel MOSFET Under Gamma Radiation as a Dosimeter
    H. A. Farroh
    A. Nasr
    K. A. Sharshar
    Journal of Electronic Materials, 2020, 49 : 5762 - 5772
  • [5] Extraction of RDS(ON) of n-Channel power MOSFET by numerical simulation model
    Salame, C.-T.
    Active and Passive Electronic Components, 2001, 24 (04) : 175 - 183
  • [6] AN N-CHANNEL MOSFET WITH SCHOTTKY SOURCE AND DRAIN
    MOCHIZUKI, T
    WISE, KD
    IEEE ELECTRON DEVICE LETTERS, 1984, 5 (04) : 108 - 111
  • [7] Radiation Analysis of N-Channel TGRC-MOSFET: An X-Ray Dosimeter
    Kumar, Ajay
    Tiwari, Balark
    Singh, Samarth
    Tripathi, Madan Mohan
    Chaujar, Rishu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (11) : 5014 - 5020
  • [8] GAAS ENHANCEMENT-DEPLETION N-CHANNEL MOSFET
    KOHN, E
    COLQUHOUN, A
    HARTNAGEL, HL
    SOLID-STATE ELECTRONICS, 1978, 21 (06) : 877 - 886
  • [9] FAR INFRARED PHOTOCONDUCTIVITY IN N-CHANNEL OF A SI MOSFET
    ALLEN, SJ
    TSUI, DC
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (03): : 248 - 248
  • [10] Enhancement-mode GaAs n-channel MOSFET
    Rajagopalan, Karthik
    Abrokwah, Jonathan
    Droopad, Ravi
    Passlack, Matthias
    IEEE ELECTRON DEVICE LETTERS, 2006, 27 (12) : 959 - 962
12345