DEVELOPMENT OF A RADIATION HARD N-CHANNEL POWER MOSFET

被引：15
|
作者：
ROPER, GB [1 ]
LOWIS, R [1 ]
机构：
[1] MULLARD LTD,SOUTHAMPTON,ENGLAND
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 06期
关键词：
D O I：
10.1109/TNS.1983.4333091
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：4110 / 4115
页数：6
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