BEHAVIOR OF HOLES GENERATED BY IMPACT IONIZATION IN n-CHANNEL MOSFET's.

被引：0
|
作者：
Kotani, Norihiko [1 ]
Kawazu, Satoru [1 ]
Komori, Shinji [1 ]
机构：
[1] Computer Development Lab Ltd, Hyogo, Jpn, Computer Development Lab Ltd, Hyogo, Jpn
来源：
IEEE Transactions on Electron Devices | 1983年 / ED-30卷 / 12期
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摘要：
SEMICONDUCTOR DEVICES, MOSFET
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页码：1678 / 1680
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