BEHAVIOR OF HOLES GENERATED BY IMPACT IONIZATION IN n-CHANNEL MOSFET's.

被引：0
|
作者：
Kotani, Norihiko [1 ]
Kawazu, Satoru [1 ]
Komori, Shinji [1 ]
机构：
[1] Computer Development Lab Ltd, Hyogo, Jpn, Computer Development Lab Ltd, Hyogo, Jpn
来源：
IEEE Transactions on Electron Devices | 1983年 / ED-30卷 / 12期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SEMICONDUCTOR DEVICES, MOSFET
引用
收藏
页码：1678 / 1680
相关论文
共 50 条
  • [21] Ionizing Radiation Dose Sensor Based on n-channel MOSFET
    Podlepetsky, B. I.
    Pershenkov, V. S.
    Belyakov, V. V.
    Bakerenkov, A. S.
    Felitsyn, V.
    Rodin, A. S.
    4TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGIES AND BIOMEDICAL ENGINEERING, ICNBME-2019, 2020, 77 : 399 - 404
  • [22] Semi-numerical modelling of an n-channel irradiated MOSFET
    Dasgupta, S
    Chakrabarti, P
    INTERNATIONAL JOURNAL OF ELECTRONICS, 2001, 88 (03) : 301 - 313
  • [23] Breakdown voltage in uniaxially strained n-channel SOI MOSFET
    Watanabe, N
    Kojima, T
    Maeda, Y
    Nishisaka, M
    Asano, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4B): : 2134 - 2139
  • [24] STUDY OF CHANNEL AVALANCHE BREAKDOWN IN SCALED N-MOSFET'S.
    Laux, Steven E.
    Gaensslen, Fritz H.
    IEEE Transactions on Electron Devices, 1987, ED-34 (05) : 1066 - 1073
  • [25] INFLUENCE OF POSTSTRESS EFFECTS ON THE DYNAMIC HOT-CARRIER DEGRADATION BEHAVIOR OF PASSIVATED N-CHANNEL MOSFET
    BELLENS, R
    DESCHRIJVER, E
    GROESENEKEN, G
    HEREMANS, P
    MAES, HE
    IEEE ELECTRON DEVICE LETTERS, 1992, 13 (07) : 357 - 359
  • [26] Detection of single holes generated by impact ionization in silicon
    Firdaus, Himma
    Watanabe, Tokinobu
    Hori, Masahiro
    Moraru, Daniel
    Takahashi, Yasuo
    Fujiwara, Akira
    Ono, Yukinori
    APPLIED PHYSICS LETTERS, 2018, 113 (16)
  • [27] A Study of the Performance of an N-Channel MOSFET Under Gamma Radiation as a Dosimeter
    H. A. Farroh
    A. Nasr
    K. A. Sharshar
    Journal of Electronic Materials, 2020, 49 : 5762 - 5772
  • [28] DEPENDENCE OF MOSFET NOISE PARAMETERS IN N-CHANNEL MOSFETS ON OXIDE THICKNESS
    PARK, HS
    VANDERZIEL, A
    SOLID-STATE ELECTRONICS, 1982, 25 (04) : 313 - 315
  • [29] Study of a 4H-SiC epitaxial n-channel MOSFET
    Tang Xiao-Yan
    Zhang Yu-Ming
    Zhang Yi-Men
    CHINESE PHYSICS B, 2010, 19 (04)
  • [30] N-CHANNEL ACCUMULATION LAYER MOSFET OPERATING AT 4-K
    GHOSH, RN
    SILSBEE, RH
    CRYOGENICS, 1990, 30 (12) : 1069 - 1073
12345