ACTIVATION AND DIFFUSION DURING RAPID THERMAL ANNEALING OF ARSENIC AND BORON IMPLANTED SILICON

被引：4
|
作者：
GROB, JJ
UNAMUNO, S
GROB, A
AJAKA, M
SLAOUI, A
STUCK, R
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 19-20卷
关键词：
D O I：
10.1016/S0168-583X(87)80100-3
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：501 / 506
页数：6
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