DOPANT PROFILE CONTROL BY RAPID THERMAL ANNEALING IN BORON AND ARSENIC IMPLANTED SILICON

被引:0
|
作者
NARAYAN, J
HOLLAND, DW
EBY, R
WORTMAN, JJ
OZGUZ, V
ROZGONYI, GA
机构
[1] OAK RIDGE NATL LAB, OAK RIDGE, TN 37830 USA
[2] N CAROLINA STATE UNIV, RALEIGH, NC 27650 USA
[3] MICROELECTR CTR N CAROLINA, RES TRIANGLE PK, NC 27709 USA
关键词
D O I
10.1109/T-ED.1983.21373
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1585 / 1585
页数:1
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