DOPANT PROFILE CONTROL BY RAPID THERMAL ANNEALING IN BORON AND ARSENIC IMPLANTED SILICON

被引：0
|
作者：
NARAYAN, J
HOLLAND, DW
EBY, R
WORTMAN, JJ
OZGUZ, V
ROZGONYI, GA
机构：
[1] OAK RIDGE NATL LAB, OAK RIDGE, TN 37830 USA
[2] N CAROLINA STATE UNIV, RALEIGH, NC 27650 USA
[3] MICROELECTR CTR N CAROLINA, RES TRIANGLE PK, NC 27709 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 11期
关键词：
D O I：
10.1109/T-ED.1983.21373
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1585 / 1585
页数：1
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