ELECTRICAL ACTIVATION OF ARSENIC ION-IMPLANTED POLYCRYSTALLINE SILICON BY RAPID THERMAL ANNEALING

被引：4

|

作者：

WONG, CY

KOMEM, Y

HARRISON, HB

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 03期

关键词：

D O I：

10.1063/1.97643

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：146 / 148

页数：3

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