共 50 条
- [1] PROPERTIES OF ION-IMPLANTED POLYSILICON LAYERS SUBJECTED TO RAPID THERMAL ANNEALING[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : C319 - C319WILSON, SRPAULSON, WMGREGORY, RBKRAUSE, SGRESSETT, JDMCDANIEL, FMDOWNING, RG
- [2] EPITAXIAL TRANSFORMATION OF ION-IMPLANTED POLYCRYSTALLINE SI FILMS ON (100) SI SUBSTRATES BY RAPID THERMAL ANNEALING[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02): : L151 - L154TAMURA, MNATSUAKI, NAOKI, S
- [3] RAPID THERMAL ANNEALING OF ION-IMPLANTED TI FILMS ON SI[J]. PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1985, 530 : 159 - 164PRAMANIK, DDEAL, MSAXENA, ANWU, OK
- [4] ELECTRICAL ACTIVATION OF ARSENIC ION-IMPLANTED POLYCRYSTALLINE SILICON BY RAPID THERMAL ANNEALING[J]. APPLIED PHYSICS LETTERS, 1987, 50 (03) : 146 - 148WONG, CYKOMEM, YHARRISON, HB
- [5] RAPID THERMAL ANNEALING OF ION-IMPLANTED SEMICONDUCTORS[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 2913 - 2921NARAYAN, JHOLLAND, OW
- [6] RAPID THERMAL ANNEALING OF ION-IMPLANTED GAAS[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (05) : 448 - 451SEALY, BJ
- [7] RAPID THERMAL ANNEALING OF ION-IMPLANTED CDTE[J]. JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (03) : 157 - 161MEIKLE, SGTHOMPSON, DA
- [8] REVIEW OF RAPID THERMAL ANNEALING OF ION-IMPLANTED GAAS[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (12) : 2590 - 2596GILL, SSSEALY, BJ
- [9] CHARACTERISTICS OF RAPID THERMAL ANNEALING IN ION-IMPLANTED SILICON[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) : 905 - 909HOLLAND, OWNARAYAN, JFATHY, DWILSON, SR
- [10] TRANSIENT ENHANCED DIFFUSION OF ION-IMPLANTED BORON IN SI DURING RAPID THERMAL ANNEALING[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) : 1754 - 1757MIYAKE, MAOYAMA, S