DIFFUSION OF PHOSPHORUS DURING RAPID THERMAL ANNEALING OF ION-IMPLANTED SILICON

被引：42

|

作者：

OEHRLEIN, GS

COHEN, SA

SEDGWICK, TO

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.95242

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：417 / 419

页数：3

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