ELECTRICAL ACTIVATION BEHAVIOR OF ION-IMPLANTED SILICON IN GALLIUM-ARSENIDE DURING RAPID THERMAL ANNEALING

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作者：
DESOUZA, JP
SADANA, DK
HOVEL, HJ
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来源：
ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS | 1989年 / 144卷
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O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
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页码：495 / 499
页数：5
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