ENHANCED DIFFUSION PHENOMENA DURING RAPID THERMAL ANNEALING OF PREAMORPHIZED BORON-IMPLANTED SILICON

被引:26
|
作者
GUIMARAES, S [1 ]
LANDI, E [1 ]
SOLMI, S [1 ]
机构
[1] CNR,INST LAMEL,I-40126 BOLOGNA,ITALY
来源
关键词
D O I
10.1002/pssa.2210950228
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:589 / 598
页数:10
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