ENHANCED DIFFUSION PHENOMENA DURING RAPID THERMAL ANNEALING OF PREAMORPHIZED BORON-IMPLANTED SILICON

被引：26
|
作者：
GUIMARAES, S [1 ]
LANDI, E [1 ]
SOLMI, S [1 ]
机构：
[1] CNR,INST LAMEL,I-40126 BOLOGNA,ITALY
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 95卷 / 02期
关键词：
D O I：
10.1002/pssa.2210950228
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：589 / 598
页数：10
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