OSCILLATION AND PHOTORESPONSE OF HIGH-RESISTIVITY N-GAAS DIODES

被引：3

作者：

TORRENS, AB

YOUNG, L

机构：

来源：

CANADIAN JOURNAL OF PHYSICS | 1972年 / 50卷 / 11期

关键词：

PHOTORESPONSE;

D O I：

10.1139/p72-152

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The present article is concerned with diodes obtained by applying ohmic contacts to slices of high resistivity n-type oxygen-doped GaAs. Above a threshold voltage, the short diodes (0. 14 to 0. 25 mm long) exhibit current oscillations which can be ascribed to propagating high-field domains. The voltage and temperature dependences of the oscillations are investigated. The response of the diodes to voltage pulses is then studied to identify the trapping processes which, it is thought, cause the domains.

引用

页码：1098 / &

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