SCHOTTKY DIODES ON HYDROGEN PLASMA TREATED N-GAAS SURFACES

被引：41
|
作者：
PACCAGNELLA, A
CALLEGARI, A
LATTA, E
GASSER, M
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
[2] IBM CORP,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 03期
关键词：
D O I：
10.1063/1.101922
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：259 / 261
页数：3
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