MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON SILICON WITH BURIED IMPLANTED OXIDES

被引：2

作者：

DAS, K

HUMPHREYS, TP

WORTMAN, JJ

POSTHILL, JB

TARN, JCL

PARIKH, N

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

[2] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27514

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 01期

关键词：

D O I：

10.1049/el:19880045

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：67 / 68

页数：2

共 50 条

[31] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS USING TRIETHYLGALLIUM AND AS4
KIMURA, K
HORIGUCHI, S
KAMON, K
MASHITA, M
MIHARA, M
ISHII, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (03): : 419 - 422
[32] STUDY OF THE EPITAXIAL-GROWTH OF GAAS(110) FILMS BY MOLECULAR-BEAM EPITAXY
FAWCETT, PN
NEAVE, JH
ZHANG, J
JOYCE, BA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04): : 1201 - 1203
[33] MOLECULAR-BEAM EPITAXIAL-GROWTH AND INTERFACE CHARACTERISTICS OF GAASSB ON GAAS SUBSTRATES
YANO, M
ASHIDA, M
KAWAGUCHI, A
IWAI, Y
INOUE, M
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 199 - 203
[34] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON GADOLINIUM-GALLIUM GARNET
CALAWA, AR
MANFRA, MJ
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (09) : 975 - 979
[35] DESORPTION OF TRIETHYLGALLIUM DURING METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS
UNETA, M
WATANABE, Y
OHMACHI, Y
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (23) : 2327 - 2329
[36] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS USING TRIMETHYLGALLIUM AS A GA SOURCE
TOKUMITSU, E
KUDOU, Y
KONAGAI, M
TAKAHASHI, K
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 3163 - 3165
[37] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF ZNTE AND CDTE ON (001) GAAS
WAGNER, BK
OAKES, JD
SUMMERS, CJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 296 - 302
[38] GROWTH CONDITION DEPENDENCE FOR GAAS SELECTIVE EPITAXIAL-GROWTH BY MOLECULAR-BEAM EPITAXY
OKAMOTO, A
OHATA, K
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1989, 18 (02) : 111 - 115
[39] MOLECULAR-BEAM EPITAXIAL-GROWTH OF FE/CR MULTILAYERS ON (001)GAAS
ETIENNE, P
CREUZET, G
FRIEDERICH, A
NGUYENVANDAU, F
FERT, A
MASSIES, J
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (02) : 162 - 164
[40] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS
CALAWA, AR
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703

← 1 2 3 4 5 →