MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON SILICON WITH BURIED IMPLANTED OXIDES

被引：2
|
作者：
DAS, K
HUMPHREYS, TP
WORTMAN, JJ
POSTHILL, JB
TARN, JCL
PARIKH, N
机构：
[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695
[2] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27514
来源：
ELECTRONICS LETTERS | 1988年 / 24卷 / 01期
关键词：
D O I：
10.1049/el:19880045
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：67 / 68
页数：2
相关论文
共 50 条
  • [21] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF EPITAXIAL GASE FILMS ON (001)GAAS
    KOJIMA, N
    SATO, K
    BUDIMAN, M
    YAMADA, A
    KONAGAI, M
    TAKAHASHI, K
    NAKAMURA, Y
    NITTONO, O
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 1175 - 1179
  • [22] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON SILICON AND SILICON ON SAPPHIRE INCORPORATING A LOW-TEMPERATURE BUFFER
    METZGER, RA
    DELANEY, MJ
    MCCRAY, L
    KANBER, H
    WANG, DC
    CHI, TY
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 297 - 300
  • [23] SELECTIVE POLYCRYSTALLINE AND EPITAXIAL-GROWTH BY SILICON MOLECULAR-BEAM EPITAXY
    GIBBINGS, CJ
    DAVIS, JR
    HOCKLY, M
    TUPPEN, CG
    [J]. THIN SOLID FILMS, 1990, 184 : 221 - 227
  • [24] MOLECULAR-BEAM EPITAXIAL-GROWTH OF SEMICONDUCTORS
    BACHRACH, RZ
    [J]. THIN SOLID FILMS, 1978, 54 (01) : 49 - 49
  • [25] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAASP
    HOLAH, GD
    MEEKS, EL
    EISELE, FL
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 182 - 185
  • [26] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INAS
    YANO, M
    NOGAMI, M
    MATSUSHIMA, Y
    KIMATA, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (12) : 2131 - 2137
  • [27] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP
    MCFEE, JH
    MILLER, BI
    BACHMANN, KJ
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) : 259 - 272
  • [28] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP
    MATSUSHIMA, Y
    HIROFUJI, Y
    GONDA, S
    MUKAI, S
    KIMATA, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (12) : 2321 - 2325
  • [29] MOLECULAR-BEAM EPITAXIAL-GROWTH AND STRUCTURAL CHARACTERIZATION OF ZNS ON (001) GAAS
    BENZ, RG
    HUANG, PC
    STOCK, SR
    SUMMERS, CJ
    [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 303 - 310
  • [30] MOLECULAR-BEAM EPITAXIAL-GROWTH ON RADIATION-HEATED GAAS SUBSTRATES
    PALMATEER, SC
    LEE, BR
    HWANG, JCM
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (11) : C467 - C467
12345