MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON SILICON WITH BURIED IMPLANTED OXIDES

被引：2
|
作者：
DAS, K
HUMPHREYS, TP
WORTMAN, JJ
POSTHILL, JB
TARN, JCL
PARIKH, N
机构：
[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695
[2] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27514
来源：
ELECTRONICS LETTERS | 1988年 / 24卷 / 01期
关键词：
D O I：
10.1049/el:19880045
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：67 / 68
页数：2
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