A Method for In-Situ Calibration of Semiconductor Detectors

A Si(Li)-detector has been calibrated for low and medium X-ray energies (E-nu less than or similar to 10 keV) using the method of variation of the X-ray incidence angle, of which the theory is briefly outlined. If the thickness of the Au-contact layer is assumed to be known, the thicknesses of the Si-dead layer and of the Be-window have been determined from a least-squares fit to the experimental data, which were obtained at different X-ray energies. A mathematical simulation of the Bremsstrahlung spectrum, recorded by the detector, confirmed that the obtained results can be regarded as realistic and reliable.