A Method for In-Situ Calibration of Semiconductor Detectors

被引：0

作者：

Wernisch, Johann ^{[1
]}

Schoenthaler, Angela ^{[1
]}

August, Hans-Juergen ^{[1
]}

机构：

[1] Tech Univ Wien, Inst Angew & Tech Phys, A-1040 Vienna, Austria

来源：

MIKROCHIMICA ACTA | 1992年

关键词：

Si(Li)-detector; calibration;

D O I：

暂无

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A Si(Li)-detector has been calibrated for low and medium X-ray energies (E-nu less than or similar to 10 keV) using the method of variation of the X-ray incidence angle, of which the theory is briefly outlined. If the thickness of the Au-contact layer is assumed to be known, the thicknesses of the Si-dead layer and of the Be-window have been determined from a least-squares fit to the experimental data, which were obtained at different X-ray energies. A mathematical simulation of the Bremsstrahlung spectrum, recorded by the detector, confirmed that the obtained results can be regarded as realistic and reliable.

引用

页码：147 / 152

页数：6

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