MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY INSB ON INP AND GAAS SUBSTRATES

被引：50
|
作者：
OH, JE
BHATTACHARYA, PK
CHEN, YC
TSUKAMOTO, S
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 08期
关键词：
D O I：
10.1063/1.344069
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3618 / 3621
页数：4
相关论文
共 50 条
  • [31] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF ZNSE ON GAAS
    REICHOW, J
    GRIESCHE, J
    HOFFMANN, N
    MUGGELBERG, C
    ROSSMANN, H
    WILDE, L
    HENNEBERGER, F
    JACOBS, K
    JOURNAL OF CRYSTAL GROWTH, 1993, 131 (3-4) : 277 - 282
  • [32] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF GAAS ON SAPPHIRE AND SILICON-ON-SAPPHIRE SUBSTRATES
    HUMPHREYS, TP
    PARIKH, NR
    DAS, K
    POSTHILL, JB
    NEMANICH, RJ
    SUMMERVILLE, MK
    SUKOW, CA
    MINER, CJ
    ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS, 1989, 144 : 195 - 200
  • [33] REPRODUCIBLE TEMPERATURE-MEASUREMENT OF GAAS SUBSTRATES DURING MOLECULAR-BEAM EPITAXIAL-GROWTH
    WRIGHT, SL
    MARKS, RF
    WANG, WI
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 505 - 506
  • [34] MIGRATION-ENHANCED MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF GAAS ON SI SUBSTRATES
    KIM, JH
    SAKAI, S
    LIU, JK
    RADHAKRISHNAN, G
    CHANG, SS
    KATZ, J
    ELMASRY, NA
    ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS, 1989, 144 : 279 - 284
  • [35] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INSB CDTE HETEROJUNCTIONS FOR MULTILAYER STRUCTURES
    GOLDING, TD
    MARTINKA, M
    DINAN, JH
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) : 1873 - 1877
  • [36] EPITAXIAL-GROWTH OF GASE FILMS BY MOLECULAR-BEAM EPITAXY ON GAAS(111), GAAS(001) AND GAAS(112) SUBSTRATES
    KOJIMA, N
    SATO, K
    YAMADA, A
    KONAGAI, M
    TAKAHASHI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (10B): : L1482 - L1484
  • [37] EPITAXIAL-GROWTH OF ZNMGSSE ON GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY
    OKUYAMA, H
    NAKANO, K
    MIYAJIMA, T
    AKIMOTO, K
    JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 139 - 143
  • [38] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF COAL ON ALAS/GAAS
    TANAKA, M
    SAKAKIBARA, H
    NISHINAGA, T
    APPLIED PHYSICS LETTERS, 1991, 59 (24) : 3115 - 3117
  • [39] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS AND OTHER COMPOUND SEMICONDUCTORS
    ADOMI, K
    CHYI, JI
    FANG, SF
    SHEN, TC
    STRITE, S
    MORKOC, H
    THIN SOLID FILMS, 1991, 205 (02) : 182 - 212
  • [40] EPITAXIAL-GROWTH OF ZNMGSSE ON GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY
    OKUYAMA, H
    NAKANO, K
    MIYAJIMA, T
    AKIMOTO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (9B): : L1620 - L1623
12345