ELECTROABSORPTION IN INGAAS/ALGAAS QUANTUM-WELLS

被引：0
|
作者：
PEZESHKI, B
LORD, SM
HARRIS, JS
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1992年 / 120期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Theoretical and experimental work show that electro-absorption improves and the quantum-confined Stark effect becomes stronger in In0.2Ga0.8As/AlxGa1-xAs quantum wells as the aluminum concentration (x) is increased in the barriers. This higher electro-absorption was used to fabricate a reflection modulator which exhibited a record reflectivity change of 77%. The enhanced electro-absorption is in contrast to material quality, as measured by photoluminescence intensity, which severely degrades with increasing aluminum composition.
引用
收藏
页码：437 / 441
页数：5
相关论文
共 50 条
  • [41] RESONANT TUNNELING IN GAAS/ALGAAS DOUBLE QUANTUM-WELLS
    EISENSTEIN, JP
    GRAMILA, TJ
    PFEIFFER, LN
    WEST, KW
    SURFACE SCIENCE, 1992, 267 (1-3) : 377 - 382
  • [42] INGAAS/INP QUANTUM-WELLS WITH PERIODIC THICKNESS VARIATION
    BERNUSSI, AA
    BRASIL, MJSP
    BRUM, JA
    COTTA, MA
    HAMM, RA
    STALEY, TW
    CHU, SNG
    HARRIOTT, LR
    PANISH, MB
    TEMKIN, H
    SOLID-STATE ELECTRONICS, 1994, 37 (4-6) : 653 - 656
  • [43] OSCILLATOR STRENGTH OF EXCITONS IN INGAAS/GAAS QUANTUM-WELLS
    ZHANG, BP
    KANO, SS
    SHIRAKI, Y
    ITO, R
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1993, 62 (09) : 3031 - 3034
  • [44] PHOTOTHERMAL DEFLECTION SPECTROSCOPY OF INGAAS/INP QUANTUM-WELLS
    WETZEL, C
    PETROVAKOCH, V
    KOCH, F
    GRUTZMACHER, D
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (07) : 702 - 706
  • [45] Detection wavelength of InGaAs/AlGaAs quantum wells and superlattices
    Choi, KK
    Bandara, SV
    Gunapala, SD
    Liu, WK
    Fastenau, JM
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (02) : 551 - 564
  • [46] INFLUENCE OF THE SUBSTRATE ON THE PHOTOCONDUCTIVITY OF INGAAS/GAAS QUANTUM-WELLS
    FORTIN, E
    SERPI, A
    SOLID STATE COMMUNICATIONS, 1993, 85 (03) : 287 - 289
  • [47] PARTIAL INTERMIXING OF STRAINED INGAAS/GAAS QUANTUM-WELLS
    MELMAN, P
    KOTELES, ES
    ELMAN, B
    ARMIENTO, CA
    OPTICAL AND QUANTUM ELECTRONICS, 1991, 23 (07) : S981 - S984
  • [48] CARRIER LIFETIME SATURATION IN INGAAS SINGLE QUANTUM-WELLS
    ONGSTAD, AP
    GALLANT, DJ
    DENTE, GC
    APPLIED PHYSICS LETTERS, 1995, 66 (20) : 2730 - 2732
  • [49] PHOTOLUMINESCENCE SATURATION IN INGAAS/GAAS SINGLE QUANTUM-WELLS
    ANEDDA, A
    CONGIU, F
    FORTIN, E
    MURA, A
    ROTH, AP
    SUPERLATTICES AND MICROSTRUCTURES, 1993, 13 (04) : 425 - 429
  • [50] CARRIER LIFETIMES IN MBE AND MOCVD INGAAS QUANTUM-WELLS
    EHRLICH, JE
    NEILSON, DT
    WALKER, AC
    KENNEDY, GT
    GRANT, RS
    SIBBETT, W
    HOPKINSON, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (02) : 307 - 309
12345