Detection wavelength of InGaAs/AlGaAs quantum wells and superlattices

被引:40
|
作者
Choi, KK
Bandara, SV
Gunapala, SD
Liu, WK
Fastenau, JM
机构
[1] USA, Res Lab, Adelphi, MD 20783 USA
[2] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
[3] IQE Inc, Bethlehem, PA 18015 USA
关键词
D O I
10.1063/1.1421216
中图分类号
O59 [应用物理学];
学科分类号
摘要
InGaAs/AlGaAs quantum well structures have been shown to be versatile for infrared detection. By changing the material composition, one can tune the detection wavelength from 2 to 35 mum and beyond. However, there have been few systematic calculations on the absorption wavelength of these structures with respect to their structural parameters. In this work we have adopted the transfer-matrix method to calculate both their energy levels and the wave functions. From this calculation, the absorption and the responsivity spectra of the structures can be predicted. The theory agrees with the experimental result of the test structures. Supported by the experimental evidence, we applied the calculation to a general class of midwavelength detectors and thus established a useful guideline for the detector design in this wavelength range. (C) 2002 American Institute of Physics.
引用
收藏
页码:551 / 564
页数:14
相关论文
共 50 条
  • [1] NOVEL DUAL WAVELENGTH ELECTROOPTICAL BISTABILITY IN INGAAS/ALGAAS MULTIPLE QUANTUM-WELLS
    GIUGNI, S
    KAWASHIMA, K
    FUJIWARA, K
    SANO, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (3B): : L313 - L315
  • [2] ELECTROABSORPTION IN INGAAS/ALGAAS QUANTUM-WELLS
    PEZESHKI, B
    LORD, SM
    HARRIS, JS
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (120): : 437 - 441
  • [3] Excitation wavelength dependence of the anomalous circular photogalvanic effect in undoped InGaAs/AlGaAs quantum wells
    Zhu, L. P.
    Liu, Y.
    Jiang, C. Y.
    Qin, X. D.
    Li, Y.
    Gao, H. S.
    Chen, Y. H.
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (08)
  • [4] SHORT-WAVELENGTH INTERSUBBAND TRANSITIONS IN INGAAS/ALGAAS QUANTUM-WELLS GROWN ON GAAS
    CHUI, HC
    MARTINET, EL
    FEJER, MM
    HARRIS, JS
    APPLIED PHYSICS LETTERS, 1994, 64 (06) : 736 - 738
  • [7] Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection
    Zhenwu Shi
    Lu Wang
    Honglou Zhen
    Wenxin Wang
    Hong Chen
    Nanoscale Research Letters, 8
  • [8] Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection
    Shi, Zhenwu
    Wang, Lu
    Zhen, Honglou
    Wang, Wenxin
    Chen, Hong
    NANOSCALE RESEARCH LETTERS, 2013, 8 : 1 - 5
  • [9] Interfacial property of the pseudomorphic InGaAs/AlGaAs multiple quantum wells
    Zhang, DH
    SURFACE REVIEW AND LETTERS, 2001, 8 (05) : 537 - 540
  • [10] Energy relaxation of electrons in GaAs AlGaAs quantum wells and superlattices
    Helm, M
    Hilber, W
    Heiss, W
    Murdin, BN
    Strasser, G
    Gornik, E
    Langerak, CJGM
    Pidgeon, CR
    INTERSUBBAND TRANSITIONS IN QUANTUM WELLS: PHYSICS AND DEVICES, 1998, : 153 - 160