ELECTROABSORPTION IN INGAAS/ALGAAS QUANTUM-WELLS

被引：0
|
作者：
PEZESHKI, B
LORD, SM
HARRIS, JS
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1992年 / 120期
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D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Theoretical and experimental work show that electro-absorption improves and the quantum-confined Stark effect becomes stronger in In0.2Ga0.8As/AlxGa1-xAs quantum wells as the aluminum concentration (x) is increased in the barriers. This higher electro-absorption was used to fabricate a reflection modulator which exhibited a record reflectivity change of 77%. The enhanced electro-absorption is in contrast to material quality, as measured by photoluminescence intensity, which severely degrades with increasing aluminum composition.
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页码：437 / 441
页数：5
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