OSCILLATOR STRENGTH OF EXCITONS IN INGAAS/GAAS QUANTUM-WELLS

被引：10
|
作者：
ZHANG, BP
KANO, SS
SHIRAKI, Y
ITO, R
机构：
[1] IBM RES, TOKYO RES LAB, YAMATO, KANAGAWA 242, JAPAN
[2] UNIV TOKYO, FAC ENGN, DEPT APPL PHYS, BUNKYO KU, TOKYO 113, JAPAN
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1993年 / 62卷 / 09期
关键词：
REFLECTANCE; FOURIER TRANSFORM SPECTROSCOPY; OSCILLATOR STRENGTH OF EXCITON; EXCITON-PHONON INTERACTION; INGAAS/GAAS SQW;
D O I：
10.1143/JPSJ.62.3031
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The oscillator strength of excitons in InGaAs/GaAs single quantum wells is studied for the first time by reflectance measurements using a Fourier transform spectrometer. Decrease of the oscillator strength of the zero phonon line at higher temperatures is found and analyzed using the temperature dependence of a modified Debye-Waller factor with an averaged phonon mode. For a sample of L=140 angstrom, the oscillator strength is estimated to be 5.1 x 10(-4) angstrom-2. The well width dependence of the oscillator strength is found to reach a maximum at a critical well width. We also observe anomalies in the oscillator strength and linewidth at temperatures lower than 50 K.
引用
收藏
页码：3031 / 3034
页数：4
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