EXCITED-STATES OF DX IN GA1-XALXAS

被引：13

作者：

VONBARDELEBEN, HJ ^{[1
]}

BOURGOIN, JC ^{[1
]}

DELERUE, C ^{[1
]}

LANNOO, M ^{[1
]}

机构：

[1] INST SUPER ELECTR N,ETUD SURFACE & INTERFACES LAB,F-59046 LILLE,FRANCE

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.44.9060

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The photoexcited neutral states of the Sn donors in Ga1-xAlxAs alloys are studied both experimentally and theoretically. Two types of donor states are evidenced: a deep strongly localized one, D0, as well as a delocalized effective-mass state d0. Both belong to the principal donor Sn(Ga), as confirmed by EPR measurements on Sn-119-enriched samples. The D0 state is consistently modeled as the A1(ab) antibonding donor state. Theory predicts the coexistence of both states D0, d0 in an intermediate alloying range. This level scheme also explains the results of the Si and Te donor reported previously.

引用

页码：9060 / 9063

页数：4

共 50 条

[21] Refractive index model for Ga1-xAlxAs
Kong, Jun
Zhang, Weijun
Yang, Zhilian
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1999, 20 (09): : 748 - 752
[22] REFRACTIVE-INDEX OF GA1-XALXAS
AFROMOWITZ, MA
SOLID STATE COMMUNICATIONS, 1974, 15 (01) : 59 - 63
[23] Localized States in GaAs/Ga1-XAlxAs Multi-Quantum-Wells
Elamri, F. Z.
Falyouni, F.
Tahri, Z.
Bria, D.
PROCEEDINGS OF THE 1ST INTERNATIONAL CONFERENCE ON ELECTRONIC ENGINEERING AND RENEWABLE ENERGY, ICEERE 2018, 2019, 519 : 137 - 145
[24] Effect of Al and Ga interdiffusion on the electronic states in GaAs/Ga1-xAlxAs semiconductor superlattice
Mughnetsyan, V. N.
Kirakosyan, A. A.
JOURNAL OF CONTEMPORARY PHYSICS-ARMENIAN ACADEMY OF SCIENCES, 2009, 44 (03) : 140 - 144
[25] DAMPING OF OPTICAL PHONONS IN GA1-XALXAS ALLOYS
JUSSERAND, B
MOLLOT, F
QUAGLIANO, LG
LEROUX, G
PLANEL, R
PHYSICAL REVIEW LETTERS, 1991, 67 (20) : 2803 - 2806
[26] THERMAL-CONDUCTIVITY OF GA1-XALXAS ALLOYS
AFROMOWITZ, MA
JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1292 - 1294
[27] A GA1-XALXAS MONOLITHIC OPTO-ISOLATOR
ROEDEL, RJ
DUTT, BV
ELHAMAMSY, M
KERAMIDAS, VG
SAUL, RH
CASSIDAY, DR
ELECTRON DEVICE LETTERS, 1980, 1 (02): : 15 - 17
[28] NUCLEATION AND GROWTH OF GA1-XALXAS ON (111)GAP
ASTLES, MG
ROWLAND, MC
JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 142 - 147
[29] MULTIBARRIER TUNNELING IN GA1-XALXAS/GAAS HETEROSTRUCTURES
VASSELL, MO
LEE, J
LOCKWOOD, HF
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5206 - 5213
[30] LEAKY TUBE ZINC DIFFUSION IN GA1-XALXAS
AGENO, SK
ROEDEL, RJ
MELLEN, N
ESCHER, JS
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : C403 - C404

← 1 2 3 4 5 →